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dc.contributor.authorYen, STen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2019-04-02T06:00:30Z-
dc.date.available2019-04-02T06:00:30Z-
dc.date.issued1997-03-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://hdl.handle.net/11536/149444-
dc.description.abstractGaInP-AlGaInP strained quantum-well lasers with emission wavelength at 630-nm band are theoretically analyzed in detail and then optimized, The valence band structure of quantum wells is obtained by evaluating the 6x6 Luttinger-Kohn Hamiltonian including the coupling among the heavy hole, the light hole, and the spin-orbital split-off hole bands, The effect of optical transition from/to continuum states not confined to the quantum well is studied, It is found that the optical transition from/to the continuum states is serious as the band gap of the confining layers is close to the quasi-Fermi level separation, leading to considerable radiative current, This radiative current is undesirable since the corresponding optical transition does not contribute significantly to the threshold gain, The gain-radiative current characteristic is therefore poor for confining layers containing a low Al content. To avoid unreasonable gain/absorption, the non-Markovian convolution lineshape is used instead of the conventional Lorentzian lineshape. The leakage current is high for single quantum-well lasers with wide bandgap confining layers, It can be reduced by increasing the quantum-well number, the dopant concentration, and the band gap of cladding layers, The calculated threshold current agrees wed with the observation, The band gap shrinkage due to the carrier-carrier interaction is considered to obtain an emission wavelength consistent with the experimental result.en_US
dc.language.isoen_USen_US
dc.subjectquantum well lasersen_US
dc.subjectquantum wellsen_US
dc.subjectsemiconductor device modelingen_US
dc.subjectsemiconductor lasersen_US
dc.subjectspontaneous emissionen_US
dc.subjectvisible lasersen_US
dc.titleTheoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum statesen_US
dc.typeArticleen_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume33en_US
dc.citation.spage443en_US
dc.citation.epage456en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WK54500021en_US
dc.citation.woscount7en_US
Appears in Collections:Articles