標題: Physical characteristics of N-2 annealing on room-temperature-deposited ion plating oxide
作者: Yeh, CF
Chen, TJ
Kao, JS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 24-Mar-1997
摘要: The effects of N-2 annealing on the physical properties of room-temperature-deposited ion plating (IF) oxide have been characterized. As-deposited IP oxide exhibits higher refractive index and dielectric constant values than high-temperature-annealed IP oxide. Strained bonds existing in as-deposited oxide can be relaxed by N-2 annealing depending on the annealing temperature. After annealing at 800 degrees C, the physical characteristics of IP oxide are comparable to those of thermal oxide. (C) 1997 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.118631
http://hdl.handle.net/11536/149465
ISSN: 0003-6951
DOI: 10.1063/1.118631
期刊: APPLIED PHYSICS LETTERS
Volume: 70
起始頁: 1611
結束頁: 1613
Appears in Collections:Articles