Full metadata record
DC FieldValueLanguage
dc.contributor.authorYang, HMen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorHuang, YCen_US
dc.contributor.authorLee, CLen_US
dc.date.accessioned2019-04-02T06:00:22Z-
dc.date.available2019-04-02T06:00:22Z-
dc.date.issued1997-03-27en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:19970375en_US
dc.identifier.urihttp://hdl.handle.net/11536/149486-
dc.description.abstractA novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.en_US
dc.language.isoen_USen_US
dc.subjectmagnetic sensorsen_US
dc.titleMOS magnetic current sensor based on standard CMOS processen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:19970375en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume33en_US
dc.citation.spage601en_US
dc.citation.epage602en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WU00100041en_US
dc.citation.woscount1en_US
Appears in Collections:Articles