MOS magnetic current sensor based on standard CMOS process

標題:	MOS magnetic current sensor based on standard CMOS process
作者:	Yang, HM Lei, TF Huang, YC Lee, CL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	magnetic sensors
公開日期:	27-三月-1997
摘要:	A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.
URI:	http://hdl.handle.net/11536/657
ISSN:	0013-5194
期刊:	ELECTRONICS LETTERS
Volume:	33
Issue:	7
起始頁:	601
結束頁:	602
顯示於類別：	期刊論文

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