MOS magnetic current sensor based on standard CMOS process

标题:	MOS magnetic current sensor based on standard CMOS process
作者:	Yang, HM Lei, TF Huang, YC Lee, CL 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics
关键字:	magnetic sensors
公开日期:	27-三月-1997
摘要:	A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.
URI:	http://hdl.handle.net/11536/657
ISSN:	0013-5194
期刊:	ELECTRONICS LETTERS
Volume:	33
Issue:	7
起始页:	601
结束页:	602
显示于类别：	Articles

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APA	Yang, H., Lei, T., Huang, Y., & Lee, C. (1997). MOS magnetic current sensor based on standard CMOS process. ELECTRONICS LETTERS.
Bibtex	@article{Yang1997MOS, title={MOS magnetic current sensor based on standard CMOS process}, author={Yang, HM and Lei, TF and Huang, YC and Lee, CL}, journal={ELECTRONICS LETTERS}, year={1997}, url={https://ir.lib.nycu.edu.tw/handle/11536/657?locale=zh_CN}, }