MOS magnetic current sensor based on standard CMOS process

doi:10.1049/el:19970375

標題:	MOS magnetic current sensor based on standard CMOS process
作者:	Yang, HM Lei, TF Huang, YC Lee, CL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	magnetic sensors
公開日期:	27-三月-1997
摘要:	A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.
URI:	http://dx.doi.org/10.1049/el:19970375 http://hdl.handle.net/11536/149486
ISSN:	0013-5194
DOI:	10.1049/el:19970375
期刊:	ELECTRONICS LETTERS
Volume:	33
起始頁:	601
結束頁:	602
顯示於類別：	期刊論文