標題: MOS magnetic current sensor based on standard CMOS process
作者: Yang, HM
Lei, TF
Huang, YC
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: magnetic sensors
公開日期: 27-Mar-1997
摘要: A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.
URI: http://dx.doi.org/10.1049/el:19970375
http://hdl.handle.net/11536/149486
ISSN: 0013-5194
DOI: 10.1049/el:19970375
期刊: ELECTRONICS LETTERS
Volume: 33
起始頁: 601
結束頁: 602
Appears in Collections:Articles