MOS magnetic current sensor based on standard CMOS process

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, HM	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Huang, YC	en_US
dc.contributor.author	Lee, CL	en_US
dc.date.accessioned	2019-04-02T06:00:22Z	-
dc.date.available	2019-04-02T06:00:22Z	-
dc.date.issued	1997-03-27	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:19970375	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149486	-
dc.description.abstract	A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.	en_US
dc.language.iso	en_US	en_US
dc.subject	magnetic sensors	en_US
dc.title	MOS magnetic current sensor based on standard CMOS process	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:19970375	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	33	en_US
dc.citation.spage	601	en_US
dc.citation.epage	602	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1997WU00100041	en_US
dc.citation.woscount	1	en_US
顯示於類別：	期刊論文