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dc.contributor.authorLin, Chih-Yangen_US
dc.contributor.authorLee, Dai-Yingen_US
dc.contributor.authorWang, Sheng-Yien_US
dc.contributor.authorLin, Chun-Chiehen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2019-04-02T06:00:56Z-
dc.date.available2019-04-02T06:00:56Z-
dc.date.issued2008-12-25en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2008.06.133en_US
dc.identifier.urihttp://hdl.handle.net/11536/149657-
dc.description.abstractResistive switching characteristics of Pt/Ti/Al2O3/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al2O3 thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al2O3, based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAl2O3en_US
dc.subjectResistive switchingen_US
dc.subjectNonvolatile memoryen_US
dc.subjectRRAMen_US
dc.titleEffect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.surfcoat.2008.06.133en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume203en_US
dc.citation.spage628en_US
dc.citation.epage631en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000261654100048en_US
dc.citation.woscount64en_US
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