標題: | The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing |
作者: | Kao, CH Lai, CS Lee, CL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-十一月-1997 |
摘要: | A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm(2)). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA. |
URI: | http://hdl.handle.net/11536/149674 |
ISSN: | 0741-3106 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 18 |
起始頁: | 526 |
結束頁: | 528 |
顯示於類別: | 期刊論文 |