The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

標題:	The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing
作者:	Kao, CH Lai, CS Lee, CL 交大名義發表電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics
公開日期:	1-十一月-1997
摘要:	A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm(2)). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.
URI:	http://dx.doi.org/10.1109/55.641434 http://hdl.handle.net/11536/229
ISSN:	0741-3106
DOI:	10.1109/55.641434
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	18
Issue:	11
起始頁:	526
結束頁:	528
顯示於類別：	期刊論文

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