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dc.contributor.authorKao, CHen_US
dc.contributor.authorLai, CSen_US
dc.contributor.authorLee, CLen_US
dc.date.accessioned2014-12-08T15:01:22Z-
dc.date.available2014-12-08T15:01:22Z-
dc.date.issued1997-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.641434en_US
dc.identifier.urihttp://hdl.handle.net/11536/229-
dc.description.abstractA TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm(2)). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.en_US
dc.language.isoen_USen_US
dc.titleThe TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.641434en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume18en_US
dc.citation.issue11en_US
dc.citation.spage526en_US
dc.citation.epage528en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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