標題: Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 Layers
作者: Chen, Wei-Ren
Chang, Ting-Chang
Hsieh, Yen-Ting
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Germanium nanocrystal (NC);nonvolatile memory (NVM);poly-silicon-oxide-nitride-oxide-silicon (SONOS)type
公開日期: 1-三月-2009
摘要: In this study, the authors proposed a formation mechanism of Ge nanocrystals (NCs) embedded in the dielectric by using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory (NVM) application. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high-pressure H-2 treatment or steam process. The metal/oxide/insulator/oxide/silicon capacitor structure with NCs was also studied, and exhibited hysteresis characteristics after electrical operation. Transmission electron microscopy clearly shows the shape and density of NCs in the dielectric. In addition, the obvious memory window can be used to define "1" and "0" states at low-voltage program operation. Furthermore, good endurance and retention characteristics are exhibited for the Ge NCs embedded in SiNx structure. Besides, this technology is suitable for the current NVM fabrication and low-power device application.
URI: http://dx.doi.org/10.1109/TNANO.2008.2005728
http://hdl.handle.net/11536/149755
ISSN: 1536-125X
DOI: 10.1109/TNANO.2008.2005728
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 8
起始頁: 185
結束頁: 189
顯示於類別:期刊論文