完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Ching-Chienen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorLiou, Bo-Hengen_US
dc.contributor.authorYeh, Fon-Shanen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2019-04-02T06:00:09Z-
dc.date.available2019-04-02T06:00:09Z-
dc.date.issued2009-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.081401en_US
dc.identifier.urihttp://hdl.handle.net/11536/149823-
dc.description.abstractThe effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-alpha) of 510 ppm/V-2 and a high capacitance density of similar to 20 fF/mu m(2) are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-alpha, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal-Insulator-Metal Capacitorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.48.081401en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000269497300020en_US
dc.citation.woscount2en_US
顯示於類別:期刊論文