Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Juhn-Jong	en_US
dc.contributor.author	Wu, Chih-Yuan	en_US
dc.date.accessioned	2019-04-02T05:58:44Z	-
dc.date.available	2019-04-02T05:58:44Z	-
dc.date.issued	2009-11-18	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0957-4484/20/46/468001	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149846	-
dc.description.abstract	We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.	en_US
dc.language.iso	en_US	en_US
dc.title	Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0957-4484/20/46/468001	en_US
dc.identifier.journal	NANOTECHNOLOGY	en_US
dc.citation.volume	20	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000271030200034	en_US
dc.citation.woscount	0	en_US
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