標題: Effect of Sn dopant on the properties of ZnO nanowires
作者: Li, SY
Lin, P
Lee, CY
Tseng, TY
Huang, CJ
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 21-八月-2004
摘要: Sri doped ZnO (SZO) nanowires were fabricated by a vapour-liquid-solid growth process. The reaction temperature for the formation of the nanowires can be reduced to similar to100degreesC due to Sri doping. The growth direction and morphology of SZO nanowires depend on the amount of Sn, which is attributed to the difference in sizes between Zn and Sri atoms. The ultraviolet emission of SZO nanowires varies from 380 to 396 nm since Sri acts as a doubly ionized donor and introduces deep states in the band gap. In addition, the SZO nanowires exhibit significantly Improved field emission characteristics with a turn-on electric field of 0.05 V mum(-1) under a current density of 0.5 mA cm(-2) in comparison with undoped ZnO nanowires. The work function of the SZO nanowire decreases for higher carrier concentrations and the field enhancement factor increases for smaller diameters. Also, the resistance of the SZO nanowire is decreased for the higher Sri mole fraction. Therefore, it is expected that SZO nanowires can be applied in nano-lasers and flat panel displays in the future.
URI: http://dx.doi.org/10.1088/0022-3727/37/16/009
http://hdl.handle.net/11536/26461
ISSN: 0022-3727
DOI: 10.1088/0022-3727/37/16/009
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 37
Issue: 16
起始頁: 2274
結束頁: 2282
顯示於類別:期刊論文


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