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dc.contributor.authorLin, Juhn-Jongen_US
dc.contributor.authorWu, Chih-Yuanen_US
dc.date.accessioned2019-04-02T05:58:44Z-
dc.date.available2019-04-02T05:58:44Z-
dc.date.issued2009-11-18en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/20/46/468001en_US
dc.identifier.urihttp://hdl.handle.net/11536/149846-
dc.description.abstractWe point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.en_US
dc.language.isoen_USen_US
dc.titleComment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'en_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/20/46/468001en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000271030200034en_US
dc.citation.woscount0en_US
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