標題: Effect of CF4 Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors
作者: Chang, Chih-Pang
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: crystallisation;elemental semiconductors;passivation;semiconductor device reliability;semiconductor thin films;silicon;sputter etching;thin film transistors
公開日期: 1-一月-2010
摘要: In this study, a CF4 plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si.
URI: http://dx.doi.org/10.1149/1.3265989
http://hdl.handle.net/11536/149872
ISSN: 0013-4651
DOI: 10.1149/1.3265989
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 157
顯示於類別:期刊論文