完整後設資料紀錄
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dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorLiang, Mei-Huien_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2019-04-02T05:59:30Z-
dc.date.available2019-04-02T05:59:30Z-
dc.date.issued2010-03-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2009.08.013en_US
dc.identifier.urihttp://hdl.handle.net/11536/149921-
dc.description.abstractWe demonstrate that growth of non-polar ZnO in a-plane and m-plane can be achieved through substrate engineering of LaAlO3 with (001) and (112) surface X-ray diffraction, reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal that a-plane ZnO on LaAlO3 (001) consists of two types of domains perpendicular to each other with in-plane orientation relationships of [000](ZnO)//[1 (1) over bar0](LAO) and [1 (1) over tilde 00](ZnO)//[1 (1) over bar0](LAO) Single domain epitaxy of m-plane ZnO on LaAlO3 (112) can be obtained with in-plane orientation relationships of (10 (1) over bar0)(ZnO)//(112)(LAO), [0001](ZnO)//[(1) over bar 10](LAO) and [1 (2) over bar 10](ZnO)//[(1) over bar(1) over bar1](LAO). (C) 2009 Elsevier B.V All rights reserveden_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjectLaAlO3en_US
dc.subjectEpitaxial growthen_US
dc.subjectDiffractionen_US
dc.titleSubstrate engineering of LaAlO3 for non-polar ZnO growthen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2009.08.013en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.spage2988en_US
dc.citation.epage2991en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000276440700017en_US
dc.citation.woscount8en_US
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