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dc.contributor.authorShew, BYen_US
dc.contributor.authorCheng, Yen_US
dc.contributor.authorShih, WPen_US
dc.contributor.authorLu, Men_US
dc.contributor.authorLee, WHen_US
dc.date.accessioned2019-04-02T05:59:29Z-
dc.date.available2019-04-02T05:59:29Z-
dc.date.issued1998-02-01en_US
dc.identifier.issn0946-7076en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s005420050097en_US
dc.identifier.urihttp://hdl.handle.net/11536/149993-
dc.description.abstractThe precision of transferred patterns are highly dependent on the quality of the mask in deep x-ray lithography. Many parameters, such as the critical energy of the synchrotron light, beamline optics and even the microstructure to be exposed should be considered in mask design. In this paper, the design rules and the boundary conditions for deep x-ray mask are discussed in general. The method of making a precision, multilayer mask using UV lithography technique is also described.en_US
dc.language.isoen_USen_US
dc.titleHigh precision, low cost mask for deep x-ray lithographyen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s005420050097en_US
dc.identifier.journalMICROSYSTEM TECHNOLOGIESen_US
dc.citation.volume4en_US
dc.citation.spage66en_US
dc.citation.epage69en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000072450400006en_US
dc.citation.woscount4en_US
Appears in Collections:Articles