Full metadata record
DC FieldValueLanguage
dc.contributor.authorChang, Yu-Mingen_US
dc.contributor.authorChang, Zue-Chinen_US
dc.contributor.authorLian, Dermingen_US
dc.contributor.authorYang, Chu-Shouen_US
dc.contributor.authorYau, Wei-Hungen_US
dc.contributor.authorTsai, Chien-Huangen_US
dc.contributor.authorWu, Wen-Faen_US
dc.contributor.authorChou, Chang-Pinen_US
dc.date.accessioned2019-04-02T05:58:15Z-
dc.date.available2019-04-02T05:58:15Z-
dc.date.issued2010-10-15en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2010.06.027en_US
dc.identifier.urihttp://hdl.handle.net/11536/150009-
dc.description.abstractWe investigated the nanotribological properties of Zn1-xMnxO epilayers (0 <= x <= 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (mu) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques. The nanoscratch system gave the mu value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn1-xMnxO epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn1-xMnxO epilayers can be identified by their nanotribological behavior. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectScanning electron microscopyen_US
dc.subjectTransmission electron microscopyen_US
dc.titleNanoscratch study of Zn1-xMnxO heteroepitaxial layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.apsusc.2010.06.027en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume257en_US
dc.citation.spage37en_US
dc.citation.epage41en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000281115800008en_US
dc.citation.woscount2en_US
Appears in Collections:Articles