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dc.contributor.authorPan, Hung-Chunen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2014-12-08T15:21:08Z-
dc.date.available2014-12-08T15:21:08Z-
dc.date.issued2012-01-25en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mseb.2011.09.037en_US
dc.identifier.urihttp://hdl.handle.net/11536/15010-
dc.description.abstractDiffusion barrier characteristics, activation energy (E(a)) of IMC growth and bonding properties of amorphous and polycrystalline electroless Co(W,P) (termed as alpha-Co(W,P) and poly-Co(W,P)) to eutectic PbSn solder are presented. Intermetallic compound (IMC) spallation and an nano-crystalline P-rich layer were observed in PbSn/alpha-Co(W,P) samples subjected to liquid-state aging at 250 degrees C. In contrast, IMCs resided on the P-rich layer in PbSn/alpha-Co(W,P) samples subjected to solid-state aging at 150 degrees C. Thick IMCs neigh-boring to an amorphous W-rich layer was seen in PbSn/poly-Co(W,P) samples regardless of the aging type. alpha-Co(W,P) was found to be a sacrificial- plus stuffed-type barrier while poly-Co(W,P) is mainly a sacrificial-type barrier. The values of E(a)'s for PbSn/alpha-Co(W,P) and PbSn/poly-Co(W,P) systems were 338.6 and 167.5 kJ/mol, respectively. Shear test revealed the ductile mode dominates the failure in both alpha- and poly-Co(W,P) samples. Analytical results indicated the high P content in electroless layer might enhance the barrier capability but degrade the bonding strength. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectElectroless Co(W,P)en_US
dc.subjectIMCen_US
dc.subjectDiffusion barrieren_US
dc.subjectShear testen_US
dc.titleDiffusion barrier characteristics and shear fracture behaviors of eutectic PbSn solder/electroless Co(W,P) samplesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mseb.2011.09.037en_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALSen_US
dc.citation.volume177en_US
dc.citation.issue1en_US
dc.citation.spage61en_US
dc.citation.epage68en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000298775500010-
dc.citation.woscount1-
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