標題: High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate Dielectrics
作者: Chen, W. B.
Cheng, C. H.
Chin, Albert
光電學院
電子工程學系及電子研究所
College of Photonics
Department of Electronics Engineering and Institute of Electronics
關鍵字: Equivalent oxide thickness (EOT);Ge;high-kappa;LaAlO3;n-MOSFETs;TaN
公開日期: 1-十二月-2010
摘要: This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm(2)/V . s at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 x 10(-10) A/mu m OFF-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 degrees C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-kappa LaAlO3 dielectric without using an interfacial layer. Using a different high-kappa HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.
URI: http://dx.doi.org/10.1109/TED.2010.2079270
http://hdl.handle.net/11536/150167
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2079270
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
起始頁: 3525
結束頁: 3530
顯示於類別:期刊論文