High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness

Abstract

We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.