High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness

doi:10.1016/j.sse.2010.09.006

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DC 欄位	值	語言
dc.contributor.author	Chen, W. B.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Lin, C. W.	en_US
dc.contributor.author	Chen, P. C.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:38:06Z	-
dc.date.available	2014-12-08T15:38:06Z	-
dc.date.issued	2011-01-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2010.09.006	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26137	-
dc.description.abstract	We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	High-kappa dielectric	en_US
dc.subject	Ge	en_US
dc.subject	EOT	en_US
dc.subject	Mobility	en_US
dc.title	High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2010.09.006	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	55	en_US
dc.citation.issue	1	en_US
dc.citation.spage	64	en_US
dc.citation.epage	67	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000284795900013	-
dc.citation.woscount	2	-
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