High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness

標題:	High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
作者:	Chen, W. B. Cheng, C. H. Lin, C. W. Chen, P. C. Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	High-kappa dielectric;Ge;EOT;Mobility
公開日期:	1-Jan-2011
摘要:	We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2010.09.006 http://hdl.handle.net/11536/26137
ISSN:	0038-1101
DOI:	10.1016/j.sse.2010.09.006
期刊:	SOLID-STATE ELECTRONICS
Volume:	55
Issue:	1
起始頁:	64
結束頁:	67
Appears in Collections:	Articles

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