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dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorAgarwal, Sanjayen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:21:10Z-
dc.date.available2014-12-08T15:21:10Z-
dc.date.issued2012-01-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2171030en_US
dc.identifier.urihttp://hdl.handle.net/11536/15018-
dc.description.abstractSingle-crystalline ZnO nanowires (NWs) were directly grown on Zn/glass substrates by using a low-temperature (i.e., 40 degrees C) supercritical carbon dioxide (SCCO(2)) fluid method. The optical, physical, and field-emission (FE) characteristics of the SCCO(2)-synthesized ZnO nanostructures are systematically investigated. ZnO NWs exhibited the low turn-on field of 3.16 V/mu m at a current density of 10 mu A/cm(2) and a low threshold field of 4.38 V/mu m at a current density of 1 mA/cm(2). The current fluctuation of ZnO emitters was less than 8% at 5.3 V/mu m in 12 h. The excellent FE properties of SCCO(2)-synthesized ZnO emitters at low temperature make them a superior candidate for FE-based display devices.en_US
dc.language.isoen_USen_US
dc.subjectField emission (FE)en_US
dc.subjectlow temperatureen_US
dc.subjectnanowire (NW)en_US
dc.subjectsupercritical carbon dioxide (SCCO(2)) fluid methoden_US
dc.subjectzinc oxide (ZnO)en_US
dc.titleField-Emission Characteristics of Zinc Oxide Nanowires Using Low-Temperature Supercritical Carbon Dioxide Fluid Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2171030en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue1en_US
dc.citation.spage119en_US
dc.citation.epage121en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000298380300039-
dc.citation.woscount0-
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