完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yang, Po-Yu | en_US |
dc.contributor.author | Agarwal, Sanjay | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:21:10Z | - |
dc.date.available | 2014-12-08T15:21:10Z | - |
dc.date.issued | 2012-01-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2011.2171030 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15018 | - |
dc.description.abstract | Single-crystalline ZnO nanowires (NWs) were directly grown on Zn/glass substrates by using a low-temperature (i.e., 40 degrees C) supercritical carbon dioxide (SCCO(2)) fluid method. The optical, physical, and field-emission (FE) characteristics of the SCCO(2)-synthesized ZnO nanostructures are systematically investigated. ZnO NWs exhibited the low turn-on field of 3.16 V/mu m at a current density of 10 mu A/cm(2) and a low threshold field of 4.38 V/mu m at a current density of 1 mA/cm(2). The current fluctuation of ZnO emitters was less than 8% at 5.3 V/mu m in 12 h. The excellent FE properties of SCCO(2)-synthesized ZnO emitters at low temperature make them a superior candidate for FE-based display devices. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Field emission (FE) | en_US |
dc.subject | low temperature | en_US |
dc.subject | nanowire (NW) | en_US |
dc.subject | supercritical carbon dioxide (SCCO(2)) fluid method | en_US |
dc.subject | zinc oxide (ZnO) | en_US |
dc.title | Field-Emission Characteristics of Zinc Oxide Nanowires Using Low-Temperature Supercritical Carbon Dioxide Fluid Method | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2011.2171030 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 33 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 119 | en_US |
dc.citation.epage | 121 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000298380300039 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |