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dc.contributor.authorPan, C. H.en_US
dc.contributor.authorLin, S. D.en_US
dc.contributor.authorLee, C. P.en_US
dc.date.accessioned2019-04-02T05:59:42Z-
dc.date.available2019-04-02T05:59:42Z-
dc.date.issued2010-11-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3506427en_US
dc.identifier.urihttp://hdl.handle.net/11536/150194-
dc.description.abstractWe have investigated the InGaAs/GaAsSb/InAlGaAs/InAlAs type-II "W" quantum wells (QWs) grown on InP substrates by molecular beam epitaxy. The photoluminescence (PL) emission wavelength longer than 2.56 mu m at room temperature (RT) is demonstrated for the first time in this material system. The PL emission peaks of our designed samples can cover a wide range from 2 to 2.5 mu m at cryogenic temperature. The samples show good optical quality that the reduction in integrated PL intensity is only around one order of magnitude from 35 K to RT. We found that the integrated PL intensity decreased as the emission wavelength increased, which is due to the reduction in the electron-hole wave function overlap. This is consistent with the calculated result. In the power dependent PL measurements, the emission peak of "W" type QWs show blue shifts with the excitation power (P-ex) but does not follow the P-ex(1/3) rule as predicted by type-II band bending model. The localized states filling effect gives reasonable explanations for the observed phenomena. (C) 2010 American Institute of Physics. [doi:10.1063/1.3506427]en_US
dc.language.isoen_USen_US
dc.title2-3 mu m mid infrared light sources using InGaAs/GaAsSb "W" type quantum wells on InP substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3506427en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume108en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000285005000020en_US
dc.citation.woscount15en_US
Appears in Collections:Articles