Influence of H2O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

doi:10.1149/1.3526097

標題:	Influence of H2O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
作者:	Chung, Wan-Fang Chang, Ting-Chang Li, Hung-Wei Chen, Chi-Wen Chen, Yu-Chun Chen, Shih-Ching Tseng, Tseung-Yuen Tai, Ya-Hsiang 電子工程學系及電子研究所光電工程學系顯示科技研究所光電工程研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display Institute of EO Enginerring
公開日期:	1-Jan-2011
摘要:	The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. As humidity increased from 0 to 80%, the mobility increased from 0.22 to 0.24 cm(2)/(V s), threshold voltage decreased from 6.6 to 4.4 V, and subthreshold swing changed from 0.77 to 1.27 V/dec. The conflicting phenomenon among the three parameters was suggested to be due to a division of the gate voltage by the water molecules which adsorbed on the thin film transistor back-channel and acted as dipoles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3526097] All rights reserved.
URI:	http://dx.doi.org/10.1149/1.3526097 http://hdl.handle.net/11536/150221
ISSN:	1099-0062
DOI:	10.1149/1.3526097
期刊:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume:	14
Appears in Collections:	Articles