完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, S. Y.en_US
dc.contributor.authorLiang, J. J.en_US
dc.contributor.authorHsu, S. Y.en_US
dc.contributor.authorLin, L. K.en_US
dc.contributor.authorTsai, T. C.en_US
dc.contributor.authorLee, S. F.en_US
dc.date.accessioned2019-04-02T05:59:57Z-
dc.date.available2019-04-02T05:59:57Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn1434-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1140/epjb/e2010-10051-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/150236-
dc.description.abstractA direct determination of the interfacial transparency on the basis of current-perpendicular-to-plane (CPP) resistances for Cu0.5Ni0.5/Nb layered system is presented. This particular realization has substantial significance for understanding the interfacial transport in such heterostructures. The unexpected large critical thickness for this weak ferromagnetic containing system can be attributed to the strong pair-breaking effect as a result of the high interfacial transparency. Besides, the strong pair-breaking also plays a decisive role in the occurrence of the dimensionality crossover of the temperature dependent upper critical magnetic field.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of Cu0.5Ni0.5/Nb interface transparency by using current-perpendicular-to-plane measurementen_US
dc.typeArticleen_US
dc.identifier.doi10.1140/epjb/e2010-10051-yen_US
dc.identifier.journalEUROPEAN PHYSICAL JOURNAL Ben_US
dc.citation.volume79en_US
dc.citation.spage153en_US
dc.citation.epage162en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000286830800004en_US
dc.citation.woscount2en_US
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