標題: Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
作者: Syu, Yong-En
Chang, Ting-Chang
Tsai, Tsung-Ming
Hung, Ya-Chi
Chang, Kuan-Chang
Tsai, Ming-Jinn
Kao, Ming-Jer
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Cobalt silicon oxide (CoSiOX);nonvolatile memory (NVM);redox reaction;resistance switching
公開日期: 1-Apr-2011
摘要: This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiOX/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.
URI: http://dx.doi.org/10.1109/LED.2011.2104936
http://hdl.handle.net/11536/150264
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2104936
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
起始頁: 545
結束頁: 547
Appears in Collections:Articles