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dc.contributor.authorLiu, Kou-Chenen_US
dc.contributor.authorTzeng, Wen-Hsienen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChan, Yi-Chunen_US
dc.contributor.authorKuo, Chun-Chihen_US
dc.date.accessioned2019-04-02T05:59:00Z-
dc.date.available2019-04-02T05:59:00Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2010.11.021en_US
dc.identifier.urihttp://hdl.handle.net/11536/150339-
dc.description.abstractA transparent resistive random access memory based on ITO/Gd2O3/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2 V/+2 V, and highly transmittance above 80% for visible light. From the TEM and XPS analysis, the asymmetry of the interfacial layer thickness is responsible for the asymmetric switching properties. The transitional multi-valance states of the bottom interfacial layer can serve as oxygen reservoir for oxygen migration back and forth under different polarity of applied bias. This work presents a candidate material Gd2O3 for the application on the T-RRAM devices. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectTransparent memoryen_US
dc.subjectResistive memoryen_US
dc.subjectGadolinium oxideen_US
dc.subjectGd2O3en_US
dc.subjectRRAMen_US
dc.subjectTRRAMen_US
dc.titleBipolar resistive switching effect in Gd2O3 films for transparent memory applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mee.2010.11.021en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume88en_US
dc.citation.spage1586en_US
dc.citation.epage1589en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000292572700133en_US
dc.citation.woscount21en_US
Appears in Collections:Articles