標題: Bipolar resistive switching effect in Gd2O3 films for transparent memory application
作者: Liu, Kou-Chen
Tzeng, Wen-Hsien
Chang, Kow-Ming
Chan, Yi-Chun
Kuo, Chun-Chih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Transparent memory;Resistive memory;Gadolinium oxide;Gd2O3;RRAM;TRRAM
公開日期: 1-Jul-2011
摘要: A transparent resistive random access memory based on ITO/Gd2O3/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2 V/+2 V, and highly transmittance above 80% for visible light. From the TEM and XPS analysis, the asymmetry of the interfacial layer thickness is responsible for the asymmetric switching properties. The transitional multi-valance states of the bottom interfacial layer can serve as oxygen reservoir for oxygen migration back and forth under different polarity of applied bias. This work presents a candidate material Gd2O3 for the application on the T-RRAM devices. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2010.11.021
http://hdl.handle.net/11536/150339
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.11.021
期刊: MICROELECTRONIC ENGINEERING
Volume: 88
起始頁: 1586
結束頁: 1589
Appears in Collections:Articles