標題: Enhancement of the Thermal Stability of TiNx Capping Layer on the Nickel Silicides
作者: Wu, Chi-Ting
Lee, Wen-Hsi
Chang, Shih-Chieh
Cheng, Yi-Lung
Wang, Ying-Lang
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: Silicide;TiNx;Capping Layer;Selectivity Etching
公開日期: 1-四月-2011
摘要: In this study, the effects of TiNx capping layers on the thermal stability of nickel silicides have been investigated in a rapid thermal annealing (RTA) process. Various TiNx films were deposited on the nickel film by different N-2 flow rates. It was found that the TINx capping layer could improve the thermal stability of nickel silicides and suppress silicide agglomeration. The TINx film deposited with higher N-2 flow rates had better thermal stability than those with lower N-2 flow rates. The corrosion behaviors of the TINx films deposited with various N-2 flow rates and nickel films in the H2SO4:H2O2 (4:1) solution were investigated. We found that the corrosion currents (I-corr) of the nickel and NiSi films were much higher than those of the TiNx films, while the I-corr of the TiNx films deposited with higher N-2 flow rates was much lower than that of the TiNx films deposited with lower N-2 flow rates.
URI: http://dx.doi.org/10.1166/nnl.2011.1151
http://hdl.handle.net/11536/150349
ISSN: 1941-4900
DOI: 10.1166/nnl.2011.1151
期刊: NANOSCIENCE AND NANOTECHNOLOGY LETTERS
Volume: 3
起始頁: 272
結束頁: 275
顯示於類別:期刊論文