標題: | Enhancement of the Thermal Stability of TiNx Capping Layer on the Nickel Silicides |
作者: | Wu, Chi-Ting Lee, Wen-Hsi Chang, Shih-Chieh Cheng, Yi-Lung Wang, Ying-Lang 照明與能源光電研究所 Institute of Lighting and Energy Photonics |
關鍵字: | Silicide;TiNx;Capping Layer;Selectivity Etching |
公開日期: | 1-四月-2011 |
摘要: | In this study, the effects of TiNx capping layers on the thermal stability of nickel silicides have been investigated in a rapid thermal annealing (RTA) process. Various TiNx films were deposited on the nickel film by different N-2 flow rates. It was found that the TINx capping layer could improve the thermal stability of nickel silicides and suppress silicide agglomeration. The TINx film deposited with higher N-2 flow rates had better thermal stability than those with lower N-2 flow rates. The corrosion behaviors of the TINx films deposited with various N-2 flow rates and nickel films in the H2SO4:H2O2 (4:1) solution were investigated. We found that the corrosion currents (I-corr) of the nickel and NiSi films were much higher than those of the TiNx films, while the I-corr of the TiNx films deposited with higher N-2 flow rates was much lower than that of the TiNx films deposited with lower N-2 flow rates. |
URI: | http://dx.doi.org/10.1166/nnl.2011.1151 http://hdl.handle.net/11536/150349 |
ISSN: | 1941-4900 |
DOI: | 10.1166/nnl.2011.1151 |
期刊: | NANOSCIENCE AND NANOTECHNOLOGY LETTERS |
Volume: | 3 |
起始頁: | 272 |
結束頁: | 275 |
顯示於類別: | 期刊論文 |