標題: Passivation of yellow luminescence defects in GaN film by annealing and CF4 plasma treatment
作者: Chen, Hsiang
Kao, Chyuan-Haur
Chen, Yi-Chen
Lo, Hong-Kai
Yeh, Yih-Min
Lu, Tien-Chang
Huang, Huei-Min
Lai, Chao-Sung
交大名義發表
National Chiao Tung University
關鍵字: GaN;yellow luminescence defect;Annealing;Plasma treatment;Chemical bonding
公開日期: 1-Jul-2011
摘要: In this study, we demonstrated that yellow luminescence (YL) defects can be mitigated with proper annealing or CF4 plasma treatment. Multiple material analyses, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and surface roughness measurements were performed to investigate improvements in GaN film material properties caused by annealing and CF4 plasma treatment. Filling vacancies during the annealing process and incorporating fluorine atoms to bond with dangling bonds during the plasma treatment process may lessen YL defects and decrease YL luminescence.
URI: http://hdl.handle.net/11536/150369
ISSN: 1454-4164
期刊: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
Volume: 13
起始頁: 973
結束頁: 975
Appears in Collections:Articles