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dc.contributor.authorHuang, Sheng-Yaoen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorLo, Hung-Pingen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.date.accessioned2019-04-02T05:59:03Z-
dc.date.available2019-04-02T05:59:03Z-
dc.date.issued2011-09-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2011.04.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/150372-
dc.description.abstractThis study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 10(4) cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85 degrees C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trapcontrolled space charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. (C) 2011 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSamarium oxide (Sm2O3)en_US
dc.subjectResistance switchingen_US
dc.subjectNonvolatile memoryen_US
dc.titleResistive switching characteristics of Sm2O3 thin films for nonvolatile memory applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2011.04.012en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume63en_US
dc.citation.spage189en_US
dc.citation.epage191en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000295066400034en_US
dc.citation.woscount29en_US
顯示於類別：期刊論文


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