Bipolar Nonlinear Ni/TiO2/Ni Selector for 1S1R Crossbar Array Applications

doi:10.1109/LED.2011.2161601

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Jiun-Jia	en_US
dc.contributor.author	Tseng, Yi-Ming	en_US
dc.contributor.author	Hsu, Chung-Wei	en_US
dc.contributor.author	Hou, Tuo-Hung	en_US
dc.date.accessioned	2019-04-02T05:59:03Z	-
dc.date.available	2019-04-02T05:59:03Z	-
dc.date.issued	2011-10-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2011.2161601	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150376	-
dc.description.abstract	A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO2 barriers. The series connection with an HfO2-resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.	en_US
dc.language.iso	en_US	en_US
dc.subject	Crossbar array	en_US
dc.subject	resistive switching	en_US
dc.subject	resistance random access memory	en_US
dc.subject	sneak current	en_US
dc.subject	4F(2)	en_US
dc.title	Bipolar Nonlinear Ni/TiO2/Ni Selector for 1S1R Crossbar Array Applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2011.2161601	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	32	en_US
dc.citation.spage	1427	en_US
dc.citation.epage	1429	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000295340300037	en_US
dc.citation.woscount	97	en_US
顯示於類別：	期刊論文