Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

標題:	Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
作者:	Chen, C. W. Hung, S. C. Lee, C. H. Tun, C. J. Kuo, C. H. Yang, M. D. Yeh, C. W. Wu, C. H. Chi, G. C. 照明與能源光電研究所 Institute of Lighting and Energy Photonics
公開日期:	1-Dec-2011
摘要:	Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO(2)(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V(f)) of 6V with a series resistance of 2.2 x 10(5) Omega. (C) 2011 Optical Society of America
URI:	http://hdl.handle.net/11536/15038
ISSN:	2159-3930
期刊:	OPTICAL MATERIALS EXPRESS
Volume:	1
Issue:	8
起始頁:	1555
結束頁:	1560
Appears in Collections:	Articles

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