Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer

doi:10.1109/LED.2011.2168939

標題:	Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer
作者:	Cheng, C. H. Chen, P. C. Wu, Y. H. Yeh, F. S. Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	GeO2;hopping conduction;resistive random access memory (RRAM);TiO2
公開日期:	1-Dec-2011
摘要:	Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
URI:	http://dx.doi.org/10.1109/LED.2011.2168939 http://hdl.handle.net/11536/150416
ISSN:	0741-3106
DOI:	10.1109/LED.2011.2168939
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	32
起始頁:	1749
結束頁:	1751
Appears in Collections:	Articles