標題: Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
作者: Binh-Tinh Tran
Chang, Edward-Yi
Lin, Kung-Liang
Wong, Yuen-Yee
Sahoo, Kartika Chandra
Lin, Hsiao-Yu
Huang, Man-Chi
Hong-Quan Nguyen
Lee, Ching-Ting
Hai-Dang Trinh
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-2011
摘要: High-quality In0.4Ga0.6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0.4Ga0.6N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0.4Ga0.6N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/APEX.4.115501
http://hdl.handle.net/11536/150428
ISSN: 1882-0778
DOI: 10.1143/APEX.4.115501
期刊: APPLIED PHYSICS EXPRESS
Volume: 4
Appears in Collections:Articles