A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

doi:10.1063/1.116471

標題:	A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
作者:	Guo, JD Lin, CI Feng, MS Pan, FM Chi, GC Lee, CT 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
公開日期:	8-Jan-1996
摘要:	Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5 x 10(17) to 1.7 x 10(19) cm(-3). The lowest value for the specific contact resistivity of 6.5 x 10(-5) Ohm cm(2) is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. (C) 1996 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.116471 http://hdl.handle.net/11536/1504
ISSN:	0003-6951
DOI:	10.1063/1.116471
期刊:	APPLIED PHYSICS LETTERS
Volume:	68
Issue:	2
起始頁:	235
結束頁:	237
Appears in Collections:	Articles