標題: A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
作者: Guo, JD
Lin, CI
Feng, MS
Pan, FM
Chi, GC
Lee, CT
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 8-Jan-1996
摘要: Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5 x 10(17) to 1.7 x 10(19) cm(-3). The lowest value for the specific contact resistivity of 6.5 x 10(-5) Ohm cm(2) is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. (C) 1996 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.116471
http://hdl.handle.net/11536/1504
ISSN: 0003-6951
DOI: 10.1063/1.116471
期刊: APPLIED PHYSICS LETTERS
Volume: 68
Issue: 2
起始頁: 235
結束頁: 237
Appears in Collections:Articles