Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiou, Jin-Chern | en_US |
dc.contributor.author | Tsai, Shang-Wei | en_US |
dc.contributor.author | Chiou, Jin-Chern | en_US |
dc.contributor.author | Huang, Cheng-Tang | en_US |
dc.date.accessioned | 2019-04-02T06:04:28Z | - |
dc.date.available | 2019-04-02T06:04:28Z | - |
dc.date.issued | 2010-01-01 | en_US |
dc.identifier.issn | 1930-0395 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/ICSENS.2010.5690256 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150521 | - |
dc.description.abstract | In situ SiO2-doped SnO2 thin films have been prepared by liquid phase deposition method. The effect of SiO2 additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO2-doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO2 gas sensor. However, the doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.33) can obtained better sensitivity ( S = 67 for 2ppm) and response time (t90% < 3 s). | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of SiO2 Additive As Inhibitor on Crystalline Structure and H2S Sensing Performance of CuO-Au-SnO2 Thin Film Prepared by Liquid Phase Deposition | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/ICSENS.2010.5690256 | en_US |
dc.identifier.journal | 2010 IEEE SENSORS | en_US |
dc.citation.spage | 333 | en_US |
dc.citation.epage | 336 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000287982100071 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |