完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChiou, Jin-Chernen_US
dc.contributor.authorTsai, Shang-Weien_US
dc.contributor.authorChiou, Jin-Chernen_US
dc.contributor.authorHuang, Cheng-Tangen_US
dc.date.accessioned2019-04-02T06:04:28Z-
dc.date.available2019-04-02T06:04:28Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn1930-0395en_US
dc.identifier.urihttp://dx.doi.org/10.1109/ICSENS.2010.5690256en_US
dc.identifier.urihttp://hdl.handle.net/11536/150521-
dc.description.abstractIn situ SiO2-doped SnO2 thin films have been prepared by liquid phase deposition method. The effect of SiO2 additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO2-doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO2 gas sensor. However, the doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.33) can obtained better sensitivity ( S = 67 for 2ppm) and response time (t90% < 3 s).en_US
dc.language.isoen_USen_US
dc.titleEffect of SiO2 Additive As Inhibitor on Crystalline Structure and H2S Sensing Performance of CuO-Au-SnO2 Thin Film Prepared by Liquid Phase Depositionen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ICSENS.2010.5690256en_US
dc.identifier.journal2010 IEEE SENSORSen_US
dc.citation.spage333en_US
dc.citation.epage336en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000287982100071en_US
dc.citation.woscount0en_US
顯示於類別:會議論文