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dc.contributor.authorChao, CJen_US
dc.contributor.authorWong, SCen_US
dc.contributor.authorHsu, CJen_US
dc.contributor.authorChen, MJen_US
dc.contributor.authorLeu, LYen_US
dc.date.accessioned2019-04-02T06:04:42Z-
dc.date.available2019-04-02T06:04:42Z-
dc.date.issued2002-01-01en_US
dc.identifier.issn1529-2517en_US
dc.identifier.urihttp://dx.doi.org/10.1109/RFIC.2002.1012056en_US
dc.identifier.urihttp://hdl.handle.net/11536/150525-
dc.description.abstractThe substrate coupling effects of two adjacent coplanar spiral inductors are characterized and modeled. The noise magnitude between two 45mum-away inductors can be reduced by 6.83 dB by using guard-ring surrounding each inductor, and improved by 10.28 dB further by adding patterned ground polysilicon shield beneath at 3 GHz. The inductor with patterned polysilicon shield beneath shows improved quality factor and noise isolation. Moreover, a macro model is presented for modeling quality factor and inductance of on-chip spiral inductor and associated neighboring inductor's coupling noise effect.en_US
dc.language.isoen_USen_US
dc.titleCharacterization and Modeling of on-chip inductor substrate coupling effecten_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RFIC.2002.1012056en_US
dc.identifier.journal2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERSen_US
dc.citation.spage311en_US
dc.citation.epage314en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000176890600071en_US
dc.citation.woscount7en_US
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