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dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHuang, Jung Y.en_US
dc.contributor.authorYu, Wen-Chienen_US
dc.contributor.authorHuang, Wen-Hsienen_US
dc.contributor.authorWang, Chao-Keien_US
dc.contributor.authorHsu, Chih-Weien_US
dc.contributor.authorLin, Yu-Hsinen_US
dc.contributor.authorChiu, Hung-Yuen_US
dc.contributor.authorDai, Bau-Tongen_US
dc.contributor.authorYang, Fu-Liangen_US
dc.date.accessioned2019-04-02T06:04:32Z-
dc.date.available2019-04-02T06:04:32Z-
dc.date.issued2010-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150526-
dc.description.abstractRecord fabrication temperature, 100 degrees C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200 degrees C (4.1% at 135 degrees C). (C) 2009 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleThin Film Silicon Solar Cell Fabricated at 100 degrees C by High Density Plasma for Flexible Photovoltaic Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000290513600136en_US
dc.citation.woscount0en_US
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