Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shen, Chang-Hong | en_US |
dc.contributor.author | Shieh, Jia-Min | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Huang, Jung Y. | en_US |
dc.contributor.author | Yu, Wen-Chien | en_US |
dc.contributor.author | Huang, Wen-Hsien | en_US |
dc.contributor.author | Wang, Chao-Kei | en_US |
dc.contributor.author | Hsu, Chih-Wei | en_US |
dc.contributor.author | Lin, Yu-Hsin | en_US |
dc.contributor.author | Chiu, Hung-Yu | en_US |
dc.contributor.author | Dai, Bau-Tong | en_US |
dc.contributor.author | Yang, Fu-Liang | en_US |
dc.date.accessioned | 2019-04-02T06:04:32Z | - |
dc.date.available | 2019-04-02T06:04:32Z | - |
dc.date.issued | 2010-01-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150526 | - |
dc.description.abstract | Record fabrication temperature, 100 degrees C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200 degrees C (4.1% at 135 degrees C). (C) 2009 Optical Society of America | en_US |
dc.language.iso | en_US | en_US |
dc.title | Thin Film Silicon Solar Cell Fabricated at 100 degrees C by High Density Plasma for Flexible Photovoltaic Application | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000290513600136 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |