標題: Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate
作者: Chiu, Ching-Hsueh
Lin, Chien-Chung
Deng, Dongmei
Kuo, Hao-Chung
Lau, Kei-May
光電工程學系
Department of Photonics
公開日期: 1-一月-2011
摘要: We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on Micro and Nano-scale Patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy (TEM) images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nanoscale epitaxial lateral overgrowth (NELOG). The plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous substrates. From temperature dependent photoluminescence (PL) and low temperature time-resolved photoluminescence (TRPL) measurement, NPLEDs has better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibits smaller electroluminescence (EL) peak wavelength blue shift, lower reverse leakage current and decreases efficiency droop compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.
URI: http://dx.doi.org/10.1117/12.893047
http://hdl.handle.net/11536/150540
ISBN: 978-0-81948-733-9
ISSN: 0277-786X
DOI: 10.1117/12.893047
期刊: ELEVENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING
Volume: 8123
起始頁: 0
結束頁: 0
顯示於類別:會議論文


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