標題: Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
作者: Chiu, Ching-Hsueh
Lin, Chien-Chung
Deng, Dong-Mei
Lin, Da-Wei
Li, Jin-Chai
Li, Zhen-Yu
Shu, Gia-Wei
Lu, Tien-Chang
Shen, Ji-Lin
Kuo, Hao-Chung
Lau, Kei-May
光電工程學系
Department of Photonics
關鍵字: Light emitting diodes;metal-organic chemical vapor deposition;nano-scale epitaxial lateral overgrowth;silicon substrate
公開日期: 1-七月-2011
摘要: We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on micro-and nano-scale patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nano-scale epitaxial lateral overgrowth. The plan-view and cross-section cathodo luminescence mappings show less defective and more homogeneous active quantum-well region growth on nano-porous substrates. From temperature-dependent photoluminescence (PL) and low temperature time-resolved PL measurement, NPLEDs have better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibit smaller electroluminescence peak wavelength blue shift, lower reverse leakage current and decrease in efficiency droop when compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.
URI: http://dx.doi.org/10.1109/JQE.2011.2114640
http://hdl.handle.net/11536/22319
ISSN: 0018-9197
DOI: 10.1109/JQE.2011.2114640
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 47
Issue: 7
起始頁: 899
結束頁: 906
顯示於類別:期刊論文


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