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dc.contributor.authorHong Quan Nguyenen_US
dc.contributor.authorHai Dang Trinhen_US
dc.contributor.authorYu, Hung Weien_US
dc.contributor.authorHsu, Ching Hsiangen_US
dc.contributor.authorChung, Chen Chenen_US
dc.contributor.authorBinh Tinh Tranen_US
dc.contributor.authorWong, Yuen Yeeen_US
dc.contributor.authorThanh Hoa Phan Vanen_US
dc.contributor.authorQuang Ho Lucen_US
dc.contributor.authorChiou, Diao Yuanen_US
dc.contributor.authorChi Lang Nguyenen_US
dc.contributor.authorDee, Chang Fuen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-04-02T06:04:19Z-
dc.date.available2019-04-02T06:04:19Z-
dc.date.issued2012-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150572-
dc.description.abstractGrowth conditions have investigated for growing high quality In0.3Ga0.7As and In0.5Ga0.5As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in InxGa1-xAs buffer layers. A high quality smooth surface In0.5Ga0.5As epi-film with threading dislocation density of 2x10(6) cm(-2) was achieved at growth temperature of 490 degrees C. Metal-oxide-semiconductor capacitor devices fabricated on In0.5Ga0.5As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.en_US
dc.language.isoen_USen_US
dc.titleThe Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)en_US
dc.citation.spage246en_US
dc.citation.epage248en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000316563400057en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper