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dc.contributor.authorHai-Dang Trinhen_US
dc.contributor.authorLin, Yue-Chinen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorHong-Quan Nguyenen_US
dc.contributor.authorWang, Shin-Yuanen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorBinh-Tinh Tranen_US
dc.contributor.authorQuang-Ho Lucen_US
dc.contributor.authorChi-Lang Nguyenen_US
dc.contributor.authorDee, Chang-Fuen_US
dc.date.accessioned2019-04-02T06:04:18Z-
dc.date.available2019-04-02T06:04:18Z-
dc.date.issued2012-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150575-
dc.description.abstractThe influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300 degrees C and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300 degrees C the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps.en_US
dc.language.isoen_USen_US
dc.titleInfluence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)en_US
dc.citation.spage747en_US
dc.citation.epage749en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000316563400175en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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